MRF8S18120HR3 MRF8S18120HSR3
13
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
?
.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the Software &
Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2009
?
Initial Release of Data Sheet
1
Oct. 2010
?
Changed Human Body Model ESD rating from Class 1A to Class 2 to reflect recent ESD test results of
the device, p. 2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF8S18260HSR6
MOSFET RF N-CH 260W NI1230S-8
MRF8S19140HSR3
FET RF N-CH 1960MHZ 28V NI780HS
MRF8S19260HSR6
FET RF N-CH 1.9GHZ 30V NI1230S-8
MRF8S21120HSR3
FET RF N-CH 2.1GHZ 28V NI780HS
MRF8S21140HSR3
FET RF N-CH 2GHZ 28V NI780S
MRF8S21200HSR6
MOSFET RF N-CH 48W NI-1230HS
MRF8S23120HSR5
MOSFET RF N-CH 120W NI-780S
MRF8S26120HSR3
FET RF N-CH 2.6GHZ 28V NI780S
相关代理商/技术参数
MRF8S18120HSR3
功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 120W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S18120HSR5
功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 120W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S18210WGHSR3
功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 210W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S18210WGHSR5
功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 210W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S18210WHS
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF8S18210WHSR3
功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 55W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S18210WHSR5
功能描述:射频MOSFET电源晶体管 HV8 1.8GHZ 55W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8S18260H
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
